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Journal of Applied Sciences and Environmental Management
World Bank assisted National Agricultural Research Project (NARP) - University of Port Harcourt
ISSN: 1119-8362
Vol. 9, No. 1, 2005, pp. 143-145
Bioline Code: ja05026
Full paper language: English
Document type: Research Article
Document available free of charge

Journal of Applied Sciences and Environmental Management, Vol. 9, No. 1, 2005, pp. 143-145

 en Studies on a-Se/n-Si and a-Te/n-Si Heterojunctions


Heterojunctions are fabricated by depositing amorphous selenium (a-Se) and amorphous tellurium (a-Te) films on n-type single (n-Si) wafers by the method of vacuum evaporation. The silicon wafers have surface orientation of (111). Resistivity of each silicon wafer is 5Ω-cm and carrier concentration of 8.30 x 1014cm-3. Two of the junction devices are annealed in a vacuum for half an hour. Current-voltage measurements are made at room temperature (298K). Rectification properties are observed in all the junctions. Barrier heights of a-Se/n-Si junctions are higher than a-Te/n-Si junctions. The current density in annealed junctions is lower than in as-deposited (unannealed) counterpart. @JASEM

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